MIS-TRANSISTOR BASED POWER SWITCH Russian patent published in 2015 - IPC H03K17/567 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to pulse engineering. A MIS-transistor based power transistor comprises a transformer, a limiting resistor, two diodes and an n-p-n transistor, between the base and emitter of which a resistor is connected; the end of the secondary coil of the transformer is connected to the source of the MIS-transistor; the transformer includes an additional secondary coil, the beginning of which is connected to the end of the secondary coil of the transformer and the end of the additional secondary coil is connected through the limiting resistor to the base of the n-p-n transistor, the collector-emitter junction of which is connected in parallel to the gate-source leads of the MIS-transistor; the switch further includes a third diode and two capacitors; all diodes and capacitors are connected on a positive pulse multiplier circuit; the input of the multiplier is connected to the secondary coil of the transformer and the output is connected to the gate-source leads of the MIS-transistor.

EFFECT: high reliability of the MIS transistor.

1 dwg