METHOD FOR PRODUCTION OF NITRIDE LIGHT-EMITTING DIODE Russian patent published in 2020 - IPC H01L33/32 

FIELD: electrical engineering.

SUBSTANCE: method of producing a nitride light-emitting diode involves successive formation on a dielectric substrate of a nitride semiconductor layer of n-type conductivity, an active layer of a nitride semiconductor, a layer of a nitride semiconductor of p-type conductivity. On the obtained heterostructure, a transparent electroconductive layer of ITO with thickness of 100–350 nm is formed by electron-beam evaporation at substrate temperature (400–500) °C with subsequent annealing in gas atmosphere at pressure close to atmospheric pressure. Metal contacts are formed, respectively, on transparent electroconductive layer ITO and on layer of nitride semiconductor of n-type conductivity. After the metal contacts are formed, a layer of SiO₂ with specific surface weight of 5–15 mcg/cm² is deposited on the transparent electroconductive ITO layer with magnetron sputtering without substrate heating.

EFFECT: invention makes it possible to form light-emitting diodes with increased quantum output due to obtaining contact layers to GaN surface of p-type conductivity having higher transmission coefficient of radiation.

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