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(11)

2 504 867

(13)

(51)

IPC

H01L33/40(2010-01-01)

B82B3/00(2006-01-01)

B82Y40/00(2011-01-01)

(21) (22)

Application

2012100323/28, 2012-01-10

(24)

Start date

2012-01-10

(22)

Actual filing date

2012-01-10

(45)

Published

2014-01-20

(72)

Inventor

Danilina Tamara IvanovnaTrojan Pavel EfimovichChistoedova Inna Anatol'Evna

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Tomskij Gosudarstvennyj Universitet Sistem Upravlenija I Radioehlektroniki

METHOD OF MAKING LIGHT-EMITTING DIODE Russian patent published in 2014 - IPC H01L33/40 B82B3/00 B82Y40/00

Abstract RU 2504867 C2

FIELD: physics.

SUBSTANCE: antireflection optical coating of SiO₂ is deposited on a light-emitting GaN-n or GaN-p surface and a microrelief is formed in said coating in form of nano-spikes with density of 10⁷-10⁸ items/cm². The present method enables to form a microrelief light-diffusing, light-emitting surface on both an n-type and p-type GaN without deterioration of heterostructure parameters.

EFFECT: high external quantum efficiency of GaN-based light-emitting diodes.

2 dwg, 1 ex

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RU 2 504 867 C2

Authors

Danilina Tamara Ivanovna

Trojan Pavel Efimovich

Chistoedova Inna Anatol'Evna

Dates

2014-01-20—Published

2012-01-10—Filed