METHOD FOR PRODUCING NITRIDE LIGHT-EMITTING DIODE Russian patent published in 2021 - IPC H01L33/02 H01L33/32 H01L33/42 H01L33/44 B82Y40/00 

FIELD: LEDs.

SUBSTANCE: method for manufacturing a nitride light-emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active nitride semiconductor layer, and a p-type nitride semiconductor layer on a dielectric substrate. On the obtained heterostructure, a transparent electrically conductive layer of GTO with a thickness of 100-700 nm is formed by electron-beam evaporation at a substrate temperature of 400-500 °C, followed by annealing in a gas atmosphere at a pressure close to atmospheric. Metal contacts are formed, respectively, on the transparent electrically conductive layer of the GTO and on the layer of the n-type nitride semiconductor. After the formation of metal contacts on the transparent electrically conductive layer of the TRP, a layer 5-15 nm thick of a transparent chemically resistant material is applied by atomic-layer deposition, which can be SiO₂ or Al₂O₃.

EFFECT: invention makes it possible to obtain light-emitting diodes with increased service life by reducing contact degradation with time.

4 cl, 4 ex, 1 dwg