LEAKAGE CURRENTS SUPPRESSION IN THE DEVICE ON THIN FILM TRANSISTORS Russian patent published in 2018 - IPC H01L27/12 

FIELD: electricity.

SUBSTANCE: group of inventions relates to the field of semiconductor devices. Leakage currents suppression method in the device comprising the structured conductive layer, forming the source electrode circuit and the drain electrode circuit for plurality of transistors, semiconductor layer providing the corresponding semiconductor channel for each transistor between the source electrode circuit and the drain electrode circuit, and the gate electrode circuit covering the plurality of transistor devices semiconductor channels for the semiconductor channels switching between two or more conductivity levels, at that, the said method comprises one or more additional conductors application, independent of the said gate electrode circuit, for the capacitive induction of the said semiconductor layer the said one or more areas conductivity reduction beyond the said semiconductor channels.

EFFECT: reduction of leakage currents.

5 cl, 3 dwg