METHOD TO MANUFACTURE VACUUM SENSOR WITH NANOSTRUCTURE AND VACUUM SENSOR ON ITS BASIS Russian patent published in 2013 - IPC G01L21/12 B82B3/00 B82Y15/00 

FIELD: measurement equipment.

SUBSTANCE: method is proposed to manufacture a vacuum sensor with a nanostructure, consisting in the fact that a thin-film semiconductor resistor is formed in the form of a meshy nanostructure (SiO₂)_50%(SnO₂)_50% by application of a sol of orthosilicic acid containing a stannum hydroxide, onto a silicon substrate with the help of a centrifuge and subsequent baking. The sol is prepared in two stages, at the first stage tetraetoxysilane and ethyl alcohol are mixed, then at the second stage distilled water is added to the produced solution, as well as hydrochloric acid (HCl) and stannum chloride dihydrate (SnCl₂·2H₂O). The vacuum sensor with the nanostructure made according to the proposed method comprises the body, the heterogeneous structure installed in it from thin films of materials, formed on the substrate of a semiconductor, the thin-film semiconductor resistor and contact sites to it, formed in the heterogenerous structure, leads of the body and contact conductors, which connect contact sites with body leads.

EFFECT: increased sensitivity of a vacuum sensor.

5 cl, 4 dwg