METHOD TO MANUFACTURE NANOSTRUCTURED SENSITIVE ELEMENT OF VACUUM SENSOR AND VACUUM SENSOR Russian patent published in 2015 - IPC G01L21/12 B82B3/00 B82Y15/00 

FIELD: measurement equipment.

SUBSTANCE: method is proposed to manufacture a nanostructured sensitive element of a vacuum sensor consisting in formation of a heterostructure from various materials, in which a thin-film semiconductor resistor is formed, afterwards it is fixed in a sensor body, and contact sites are connected to body outputs with the help of contact conductors. A thin-film semiconductor resistor is formed in the form of a meshy nanostructure (SiO₂)_40%(SnO₂)_50%(In₂O₃)_10%, where 40% - mass fraction of silicon dioxide (SiO₂), 50% - mass fraction of Sn dioxide (SnO₂), 10% - mass fraction of indium oxide (In₂O₃), by application of a sol of orthosilicic acid, containing Sn hydroxide, onto a substrate from silicon with the help of a centrifuge and subsequent baking, which is prepared in two stages, at the first stage they mix tetraethoxysilane and ethyl alcohol, then at the second stage they add distilled water into the produced solution, as well as hydrochloric acid (HCl) and Sn chloride dihydrate (SnCl₂·2H₂O), and also additionally 4,5-hydrate indium nitrate (In(NO₃)₃·4,5H₂O). Also a vacuum sensor is proposed with a nanostructure manufactured in accordance with the proposed method.

EFFECT: increased sensitivity of a sensor compared to previously available ones.

3 cl, 3 dwg