METHOD TO MANUFACTURE VACUUM SENSOR WITH NANOSTRUCTURE HIGHER SENSITIVITY AND VACUUM SENSOR ON ITS BASIS Russian patent published in 2014 - IPC H01L21/20 G01L21/12 B82B3/00 

FIELD: measurement equipment.

SUBSTANCE: invention relates to measuring technique. A method of manufacturing a vacuum sensor with nanostructure hypersensitivity is that the heterostructure formed of different materials, in which a semiconductor thin film resistor is formed, whereupon it is fixed in the sensor housing, and contact pads connected to the housing by means of pin contacts of the conductors. A semiconductor thin film resistor is formed as a mesh nanostructure (SiO₂)20% (SnO₂)80% by applying the orthosilicic acid sol comprising tin hydroxide on a silicon substrate using a centrifuge and subsequent annealing, which is prepared in two stages, at the first stage they mix tetraethoxysilane and ethyl alcohol, and then in the second step the resultant solution is introduced into distilled water, hydrochloric acid and stannous chloride dihydrate (SnCl₂ · 2H₂O) in certain ratios.

EFFECT: invention provides for increased sensitivity of a vacuum sensor.

2 cl, 4 dwg