METHOD OF MAKING VACUUM SENSOR WITH PRESET-SENSITIVITY NANOSTRUCTURE AND VACUUM SENSOR BUILT THERE AROUND Russian patent published in 2014 - IPC H01L21/20 G01L21/12 B82B3/00 

FIELD: instrumentation.

SUBSTANCE: in compliance with proposed method hetero structure is made from different materials. Thin-film semiconductor resistor is formed in said structure. Then, said structure is secured in sensor case while contact sites are connected to case terminals by contact conductors. Said thin-film semiconductor resistor is formed as a grid-type nanostructure (SiO₂)_100%-x(SnO₂)_x. Weight fraction of component x is defined (set) in the range of 50%≤x≤90% by applying the orthosilicic acid sol containing tin hydroxide on silicon substrate with the help of centrifuge followed annealing. Said sol is prepared in two steps: at first step, tetraethoxysilane and ethanol, then, at second step, distilled water, hydrochloric acid (HCl) and tin chloride dehydrate (SnCl₂·2H₂O) are added to aforesaid solution.

EFFECT: higher sensitivity.

2 cl, 10 dwg