METHOD OF FORMING EPITAXIAL ARRAY OF MONOCRYSTALLINE NANOISLANDS OF SILICON ON SAPPHIRE SUBSTRATE IN VACUUM Russian patent published in 2016 - IPC H01L21/203 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention relates to sublimation growing of epitaxial arrays of self-organised monocrystalline nanoislands of silico on sapphire substrates and can be used in both nanotechnological process, characterised by high stability of formation of uniform-size nanoislands of silicon with low degree of defectiveness of their structure. Method of forming epitaxial array of monocrystalline silicon nanoislands on a sapphire substrate in a vacuum, including annealing a Sapphire substrate in a vacuum chamber, heating a silicon source by passing an electric current through it and growing on heated sapphire substrate an array of monocrystalline silicon nanoislands by self-organised formation of nanoislands on surface sapphire substrate from deposited atomic silicon, annealing of sapphire substrate is carried out at 1,200 °C, and evaporated atomic silicon stream is deposited on sapphire substrate, heated to temperature T, selected from an interval of its values of 550-700 °C, with growth rate of atomic layers of silicon V, selected depending on distance between evaporated surface of silicon source and surface of growth of sapphire substrate and substrate heating temperature.

EFFECT: invention provides stable reduction of defectiveness of sublimation-formed uniform-size nanoislands of silicon on a sapphire substrate.

4 cl, 2 dwg, 1 tbl