METHOD OF PRODUCING AN EPITAXIAL FILM OF A MULTILAYER SILICEN INTERCALATED BY EUROPIUM Russian patent published in 2018 - IPC C30B23/08 C30B23/06 C30B29/10 C01B33/06 C23C14/06 C23C14/16 C23C14/34 C23C14/54 H01L21/20 H01F41/30 B82B3/00 B82Y30/00 B82Y40/00 

FIELD: technological processes.

SUBSTANCE: invention relates to methods for producing epitaxial thin-film materials, namely to EuSi₂ crystal modification of hP3 (space group N164, ) with a structure of intercalated by europium silicene, that can be used to make experiments to study the silicene lattice. Method is based on stabilizing the required EuSi₂ phase by its epitaxial growth on the SrSi₂ buffer layer preformed on Si(001) or Si(111). Method consists in precipitation by molecular beam epitaxy of an atomic strontium flow with pressure P_Sr=(0.5÷3)⋅10^-8 Torr on the surface of the silicon substrate previously cleaned and heated to T_s=500±20 °C to form the strontium disilicide film, and in further precipitation of the atomic europium flow with pressure P_Eu=(0.5÷10)⋅10^-8 Torr on the substrate at a temperature of T_s=430÷550 °C to form a europium disilicide film with a thickness of not more than 8 nm. Wherein the silicide layers are formed due to the diffusion of atoms.

EFFECT: invention allows obtaining homogeneous epitaxial magnetic films not containing extraneous phases, allowing studing the physical properties of two-dimensional silicon lattices with a hexagonal cellular structure.

3 cl, 5 dwg, 4 ex