METHOD TO MANUFACTURE PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2013 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: method to manufacture a pressure sensor on the basis of a thin-film nano- and microelectrical system consists in polishing of a membrane surface, formation of a dielectric film on it and strain elements with low-ohmic links and contact sites between them, using a template of a strain-sensitive layer. The strain sensitive layer has a configuration of strain elements in zones matched with low-ohmic links and contact sites, in the form of strips, which include images of strain elements and their extensions into two opposite directions, and in zones matched with contact sites - partially matching with the configuration of contact sites and distanced from the strips of sections, connection of output conductors to contact sites in areas distanced from the strips of sections. Elements and transitions of strain resistors are arranged and realised so that their characteristics and factors acting at these elements and transitions meet the appropriate ratio.

EFFECT: improved time stability, resource, service life.

2 cl, 2 dwg