METHOD OF MAKING PRESSURE STRAIN GAGE ON BASIS OF THIN-FILM NANO-AND MICROELECTROMECHANICAL SYSTEM (NMEMS) Russian patent published in 2014 - IPC G01L9/00 B82B3/00 

FIELD: instrumentation.

SUBSTANCE: proposed method consists in finishing the membrane surface, making dielectric film and strain elements with low-value jumpers and contact sites there between using the strain-sensitive layer template. It comprises connection of output terminals to said contact sites in areas remote from strips of said sites. After connection of output terminals to contact sites of the NMEMS strain elements are subjected to test magnitudes of lower P₀ and upper P_H limits of measured pressure at complete perception of normal T₀₀, lower T₁ and higher T₂ temperatures. The latter equal that of normal climatic conditions, permissible lower temperature and permissible higher temperature at transducer operation, respectively. NMEMS output signals U₀₀, U_H00, U_0T1, U_HT1, U_0T2, U_HT2 are measured at simultaneous effects of pressures and temperatures P₀ and T₀₀, P_H and T₀₀, P₀ and T₁, P_H and T₁, P₀ and T₂, P_H and T₂. The latter are used to calculate transient stability criterion by the relationship Ψ_τ05=[(U_HT1-U_0T1)-(U_HT2-U_0T2)](T₁-T₂)^-1(U_H00-U₀₀)^-1.

EFFECT: higher temporary stability, longer life.

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