METHOD TO MANUFACTURE STRAIN-GAUGE RESISTOR SENSOR OF PRESSURE BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM Russian patent published in 2014 - IPC G01L9/04 B81B7/02 B82Y40/00 

FIELD: measuring equipment.

SUBSTANCE: invention belongs to measuring equipment, in particular to pressure sensors on the basis of thin-film nano -and the microelectric systems (NiMEMS) intended for use in control systems, control and diagnostics of objects of long functioning. The method of manufacturing consists in polishing of a surface of a membrane, formation on it of a dielectric film and a strain gauge element with low-impedance crossing points and contact platforms between them with use of a template of the strain-gauge sensitive layer having a configuration of a strain gauge element in zones, combined with the low-impedance crossing points and contact platforms. Thus formation of the strain-gauge element with the low-impedance crossing points and contact platforms between them is carried out in areas, in which deformations and temperatures influencing them during operation meet the corresponding ratio. After formation they measure dimensions and area of elements and transitions of NiMEMS taking into account quantity, dimensions and distribution of defects, then using them they calculate the criterion of temporary stability according to the corresponding ratio. If the criterion of temporary stability is less than maximum permissible value of criterion of temporary stability, which is determined experimentally by statistical data for a concrete standard size of the sensor, this assembly is transferred to the subsequent operations.

EFFECT: increase of temporary stability, resource and service life.

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