PHOTONIC-CRYSTAL LED Russian patent published in 2013 - IPC H01L33/58 

FIELD: electrical engineering.

SUBSTANCE: semiconductor light-emitting diode (LED) (1) contains: the first and second electrodes (40, 11) to supply voltage to active area (4) between layer (21) of the first type semiconductor and layer (30) of the second type semiconductor to generate light, light-emitting surface (6) to emit light and variety of photonic crystals (101, 102) between light-emitting surface (6) and active area (4). At that at least two photonic crystals (101, 102) of the first and second type selected from variety of photonic crystals (101, 102) are capable to output light from the active area (4) and differ from each other by at least one lattice constant. At that each of two photonic crystals (101, 102) has respective direction pattern in far-field zone. At that variety of photonic crystals (101, 102) is located so that direction pattern in far-field zone of the light generated in LED (1) is created by joining of direction patterns in far-field zones of at least two photonic crystals (101, 102). At that the second electrode contains sub-electrodes at the active area side opposite to the light-emitting surface, at that the first and second sub-electrodes are associated with respective photonic crystal of the first and second type respectively. The first and second sub-electrodes are controlled individually by respective voltage supplied to each of the first and second sub-electrodes, whereby direction pattern in far-field zone of the LED is controlled dynamically in result of difference in direction patterns in far-field zones of photonic crystals of the first and second type.

EFFECT: improvement of light emission output, uniformity of direction pattern.

14 cl, 7 dwg