FIELD: metallurgy.
SUBSTANCE: Sn and In are extracted from aqueous solutions of their salts by carbonic acids to produce extracts of indium and stannum. Extracts of In and Sn are mixed at the ratio of 9:1, the mixture of extracts is applied onto the substrate, which is centrifuged for even spreading of extracts, dried at 100-130°C for 1 minute and further exposed to pyrolysis on air at 400-500°C until decomposition of organic phases and burnt. Application of the mixture of In and Sn extracts, centrifuging, drying and pyrolysis are cycled from 5 to 30 times depending on the required thickness of the produced film. Burning is done on air at 450°C for 1 hour, or in vacuum at 300°C for 3 min.
EFFECT: increased purity and homogeneity of ITO films due to usage of solutions of indium and stannum extracts, and also preservation of concentration of a solution during storage and improved wettability of a substrate with minimum costs.
3 cl, 5 dwg, 1 tbl, 1 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING THIN TIN DIOXIDE FILMS | 2010 |
|
RU2446233C1 |
METHOD OF OBTAINING THIN FILMS OF TIN-INDIUM OXIDE | 2017 |
|
RU2656916C1 |
PROCESS OF MANUFACTURE OF ELECTRICITY CONDUCTIVE TRANSPARENT FILMS | 1992 |
|
RU2034363C1 |
METHOD OF PRODUCING NITRIDE LIGHT-EMITTING DIODE | 2013 |
|
RU2530487C1 |
METHOD FOR PRODUCTION OF NITRIDE LIGHT-EMITTING DIODE | 2019 |
|
RU2721166C1 |
OPTICAL COATING BASED ON ITO FILMS WITH DEPOSITED CARBON NANOTUBES | 2022 |
|
RU2801791C1 |
ELECTRON-SELECTIVE LAYER BASED ON INDIUM OXIDE DOPED WITH ALUMINUM, ITS MANUFACTURING METHOD AND PHOTOVOLTAIC DEVICE BASED ON IT | 2021 |
|
RU2764711C1 |
METHOD FOR PRODUCTION OF THIN FILMS BASED ON INDIUM-TIN OXIDE BY MICRO-PLOTTER PRINTING | 2022 |
|
RU2785983C1 |
BIS(N,N- DIETHYL CARBAMATE) OF TIN, METHOD FOR ITS PREPARATION AND MANUFACTURE OF ALLOYED TIN OXIDE FILMS BASED ON IT | 2020 |
|
RU2761322C1 |
METHOD FOR PRODUCTION OF NITRIDE LIGHT-EMITTING DIODE | 2018 |
|
RU2690036C1 |
Authors
Dates
2013-08-27—Published
2012-03-27—Filed