METHOD OF PRODUCING NITRIDE LIGHT-EMITTING DIODE Russian patent published in 2014 - IPC H01L33/32 

FIELD: chemistry.

SUBSTANCE: method of making a nitride light-emitting diode (LED) includes successively forming, on a dielectric substrate, a layer of nitride semiconductor with n-type conductivity, an active layer of nitride semiconductor, a layer of nitride semiconductor with p-type conductivity, a first transparent electroconductive layer of indium tin oxide (ITO) with thickness of 5-15 nm by electron-beam deposition with intermediate annealing in a gas atmosphere at pressure close to atmospheric pressure, a second transparent electroconductive layer of ITO with a considerably larger thickness, followed by annealing the obtained structure at gas pressure close to atmospheric pressure, and depositing metal contacts respectively on the second transparent electroconductive layer of ITO and on the layer of nitride semiconductor with n-type conductivity. The second transparent electroconductive layer of ITO is deposited by magnetron sputtering of a target.

EFFECT: method according to the invention enables to obtain a nitride LED with contact layers having maximum transparency, a higher refraction index, higher charge carrier mobility and better electroconductivity.

1 dwg, 2 ex