FIELD: physics; semiconductors.
SUBSTANCE: white light-emitting diode which can emit light in a wide range which includes all visible regions of the spectrum, is made through gaseous-phase epitaxy from organometallic compounds (OMC) by closing indium nitride (InN) and indium enriched indium gallium nitride (InGaN) quantum dots (QD) in one or more InxGa1-xN/InyGa1-yN quantum wells (QW) by introducing a nucleating centre of at least one of trimethylindium (TMI), triethylindium (TEI) and ethyldimethylindium (EDMI), which serve as nuclei for growth of QD in QW.
EFFECT: diode can emit white light in the 400-750 nm range by regulating introduction parametres.
15 cl, 3 dwg
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