POWER HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2018 - IPC H01L27/12 

FIELD: electrical engineering.

SUBSTANCE: invention relates to electronic engineering, namely, to the design of powerful hybrid integrated circuits of the microwave range of wavelengths. Powerful hybrid microwave integrated circuit contains an electrically conductive base made of a heat-conducting material with a low coefficient of thermal linear expansion, on which dielectric substrates electrically connected by the method of thermo-sound micro-welding with a topological pattern of metallization on the front side and screen grounding metallization on the reverse side and discrete components (semiconductor devices and single-layer microwave capacitors in the form of crystals) located between them and at least two dielectric substrates, between which is located at least one crystal of the semiconductor device, which are chamfered along the planes in the direction of the crystal of the semiconductor device such that the change in the thicknesses of these dielectric substrates from their sides adjacent to the crystal, to the opposite is more than two times.

EFFECT: improved thermal and electrical characteristics.

1 cl, 2 dwg