FIELD: physics.
SUBSTANCE: method according to the invention involves treating the surface of (111) oriented monocrystalline silicon with pulsed laser radiation focused perpendicular to the treated surface with pulse duration of 15 ns. The (111) oriented monocrystalline silicon is first placed in a ultrasonic bath and treated in alcohol for 30 minutes, and laser treatment is carried out with pulses with wavelength of 266 nm and frequency of 6 Hz. The number of pulses is equal to 5500-7000 with energy density on the treated surface of 0.3 J/cm2.
EFFECT: invention enables to form periodic pyramidal structures on the surface of monocrystalline silicon, having a monocrystalline structure and three crystal orientation planes.
1 tbl, 5 dwg
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