FIELD: physics.
SUBSTANCE: method according to the invention involves treating the surface of (111) oriented monocrystalline silicon with pulsed laser radiation focused perpendicular to the treated surface with pulse duration of 15 ns. The (111) oriented monocrystalline silicon is first placed in a ultrasonic bath and treated in alcohol for 30 minutes, and laser treatment is carried out with pulses with wavelength of 266 nm and frequency of 6 Hz. The number of pulses is equal to 5500-7000 with energy density on the treated surface of 0.3 J/cm2.
EFFECT: invention enables to form periodic pyramidal structures on the surface of monocrystalline silicon, having a monocrystalline structure and three crystal orientation planes.
1 tbl, 5 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR OBTAINING A NANOMODIFIED STRUCTURE ON THE SURFACE OF SILICON | 2016 |
|
RU2649223C1 |
METHOD FOR PRODUCTION OF RE-EMITTING TEXTURED THIN FILMS BASED ON AMORPHOUS HYDROGENATED SILICON WITH SILICON NANOCRYSTALS | 2015 |
|
RU2619446C1 |
PROCESS OF RECRYSTALLIZATION OF SILICON LAYERS | 1991 |
|
SU1826815A1 |
METHOD FOR OBTAINING MICROSTRUCTURES ON THE SURFACE OF A SEMICONDUCTOR | 2020 |
|
RU2756777C1 |
METHOD OF PRODUCING THIN EPITAXIAL LAYERS OF β-SIC ON MONOCRYSTALLINE SILICON | 2013 |
|
RU2524509C1 |
METHOD OF OBTAINING SILICIUM STRUCTURE ON INSULATOR | 0 |
|
SU1637599A1 |
METHOD FOR MASK CREATION AT SUBSTRATE SURFACE | 2011 |
|
RU2450384C1 |
METHOD FOR PULSED-LASER PRODUCTION OF HIGH DIELECTRIC CONSTANT THIN-FILM MATERIALS | 2004 |
|
RU2306631C2 |
METHOD OF MAKING SUPERCONDUCTING THIN FILM WITH REGIONS WITH DIFFERENT VALUES OF CRITICAL CURRENT DENSITY | 2008 |
|
RU2375789C1 |
METHOD FOR PRODUCING STRUCTURES WITH BURIED METAL LAYER | 1992 |
|
RU2045795C1 |
Authors
Dates
2013-12-10—Published
2012-06-09—Filed