FIELD: electric elements.
SUBSTANCE: invention relates to production of semiconductor devices. Method of doping silicon plates according to the invention consists in irradiating the surface of silicon substrates through an optically transparent plate for laser radiation with a thin film consisting of a dopant source material, pulses of focused laser radiation with energy density sufficient for heating silicon surface to temperature, at which there is diffusion of dopant atoms into it, but not exceeding the ablation threshold of the film material.
EFFECT: invention increases efficiency of optical absorption of silicon in the near and middle infrared range by increasing the efficiency of doping, namely, introduction of dopant in concentration exceeding equilibrium solubility limit into surface layer of crystalline silicon substrate.
7 cl, 2 dwg, 2 ex
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