PROCESS OF RECRYSTALLIZATION OF SILICON LAYERS Russian patent published in 1995 - IPC

Abstract SU 1826815 A1

FIELD: microelectronics. SUBSTANCE: polycrystalline silicon with grain size 10^-2- 10²μm is precipitated on monocrystalline silicon substrate and is recrystallized with the use of pulse laser radiation with duration of laser pulse from 7 to 100 ns and density of energy of laser radiation of 2.7-3.2 J/sq. cm. Length of wave of laser radiation is kept within band of interzone absorption of silicon. EFFECT: enhanced efficiency of process. 3 dwg

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SU 1 826 815 A1

Authors

Labunov V.A.

Demchuk A.V.

Dates

1995-03-27—Published

1991-05-16—Filed