FIELD: electricity.
SUBSTANCE: resistive flash memory element contains a semiconductive substrate with a conducting electrode on its working surface with a layer of dielectric, in the dielectric layer there is another conducting electrode, moreover the conducting electrode at the dielectric side has a protrusion that ensures formation of a string and passage of electric current through the dielectric material and the required intensity of the electric field for the string formation and electric current passage, at that the electrode from the dielectric side at the working surface of the substrate or the second conducting electrode in the dielectric layer has the protrusion described above.
EFFECT: reproducibility of a hysteresis window for the resistive memory element.
4 cl, 1 dwg
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