FIELD: electronics.
SUBSTANCE: invention relates to microelectronics. Restoring memory element has a substrate with a conducting electrode located on its working surface. Said conducting electrode has an active layer of dielectric. Second conducting electrode is located on the active layer. Conducting electrode located on the working surface and/or the second conducting electrode are made from metal. Dielectric layer is metal oxide from which conducting electrode located on the working surface and/or the second conducting electrode is made.
EFFECT: technical result is lower voltage of reprogramming, as well as reduction of consumed power for reprogramming.
14 cl, 1 dwg
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