METHOD OF PRODUCTION OF ACTIVE LAYER FOR GENERAL-PURPOSE MEMORY ON BASIS OF RESISTIVE EFFECT Russian patent published in 2017 - IPC H01L27/115 

FIELD: electricity.

SUBSTANCE: method of production of the active layer for the general-purpose memory on the basis of resistive effect includes deposition of the dielectric layer - hafnium oxide - on the underlay. As a result of deposition, hafnium oxide of non-stoichiometric composition is obtained - HfO_x, containing oxygen vacancies. The deposition is carried out by ion beam sputtering-deposition of Hf target in the oxygen-containing atmosphere. At the same time, stoichiometric composition x is set with partial oxygen pressure of x<2. The value of pressure is selected within the range from 2×10^-4 Pa to 1×10^-2 Pa, including the above values.

EFFECT: appearance of the hysteresis window on current-voltage characteristic of the resistance element, obtaining a reversible resistive switching without performing the forming process, and preventing a possible failure of the memory element in the preparatory phase of the work.

5 cl, 2 dwg