METHOD OF MAKING PHOTODETECTOR ARRAY Russian patent published in 2014 - IPC H01J40/14 

FIELD: physics.

SUBSTANCE: invention relates to the technology of producing semiconductor photodetectors and can be used to design multielement photodetectors for various purposes. Producing a photodetector array from bulk material requires thinning the base region of an array photosensitive element to thickness of 10-15 mcm. The thinning process includes chemical-mechanical polishing to thickness of the base region of the photosensitive element of 80-100 mcm and chemical-dynamic polishing to final thickness. A photosensitive element with a thick base region is made with a peripheral region which is not coated with a dielectric coating on the front side of a chip with thickness of 200-300 mcm. Thinning completely eliminates a peripheral non-etched part of the dielectric coating on the front side of the array photosensitive element.

EFFECT: high quality of the photodetector by preventing remains of a non-etched part of the dielectric coating on the side where an antireflection coating is deposited.

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