MULTI-ELEMENT PHOTODETECTOR Russian patent published in 2019 - IPC H01L27/142 H01L31/256 

FIELD: image forming devices.

SUBSTANCE: multielement photodetector with thin photosensitive base, including matrix of photosensitive elements from one of semiconductor materials Cd_xHg_1-xTe, InSb, InGaAs, QWIP connected to the reading circuit by indium micro contacts, with an antireflection coating which provides minimum reflection in the spectral range of sensitivity of photodiodes, characterized in that the antireflection coating is created with reduced mechanical stresses by successive vacuum deposition of silicon by electron-beam evaporation with deposition rate of 0.08 nm/s and yttrium fluoride layer by resistive evaporation at deposition rate of 0.7 nm/s.

EFFECT: invention enables to improve the homogeneity of parameters of the matrix photodetector in a wide spectral range, including 1–3, 3–5, 8–14 mcm, in series production due to higher homogeneity of distribution of sensitivity on the area of the matrices.

5 cl, 1 tbl, 2 dwg