QUARTZ AMPOULE DESIGN FOR DIFFUSION OF DOPANTS INTO SILICON (ARSENIC DIFFUSION) WITH BUILT-IN TOOL FOR CONTROLLING RATE OF POST-DIFFUSION COOLING OF SILICON P-N STRUCTURES Russian patent published in 2014 - IPC H01L21/22 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor microelectronics, particularly the technology of producing p-n junctions in silicon via a "closed pipe" method - vacuum-sealed quartz ampoule method. The quartz ampoule for diffusion of dopants into silicon by via a closed pipe method consists of a quartz envelope 3 into which are loaded silicon wafers 1 and a diffusion source 2, a polished quartz stopper 4 which seals the ampoule on the side where the silicon wafers 1 and the diffusion source 2 are loaded, and a quartz exhaust tube 6 through which the ampoule is evacuated, followed by sealing the ampoule from the vacuum system. The polished stopper 4 is in form of an open cavity 13, which allows forced cooling of the quartz ampoule retrieved from a diffusion furnace 8 after high-temperature diffusion annealing with a defined volume of cold water by pouring said water into the cavity 13 using a special device 14 situated above the ampoule.

EFFECT: invention provides control and stabilisation of the cooling mode of a quartz ampoule with silicon planar p-n-structures immediately after high-temperature annealing.

6 dwg, 1 tbl