METHOD OF INCREASING RADIATION RESISTANCE OF TEMPERATURE COMPENSATED DIODES Russian patent published in 2018 - IPC H01L29/866 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of development and production of radiation-resistant semiconductor devices, mainly low-voltage temperature-compensated diodes, used as sources of reference voltage, i.e. basic electronic components, in electronic systems of high-precision equipment, incl. in the control systems of aircraft. Temperature-compensated diode (TCD) is manufactured in a two-crystal version, i.e. the main and compensating p-n junctions are formed in individual crystals, and the crystal with a compensating p-n junction is additionally doped with gold.

EFFECT: creation of a method for increasing radiation resistance (TCD), the design of which contains two p-n junctions facing each other – "main" one, driven in the opposite direction, with a positive sign of the temperature coefficient of the reverse voltage, and "compensating", driven forward, with a negative sign of the temperature coefficient of the forward voltage, which ensures the radiation escape of the stabilization voltage of the TCD when exposure to the maximum radiation doses is not more than several mV.

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