FIELD: process engineering.
SUBSTANCE: invention relates to solid-state microelectronics, particularly, to making of p-n-junctions in silicon by "sealed tube" tube, that is, evacuated sealed quartz ampoule. Here, after high-temperature diffusion annealing of said ampoule it is subjected to forced cooling by definite amount of water kept at definite temperature.
EFFECT: reproducible conditions of breakdown voltages in LV p-n-junctions, hence, higher yield of devices.
3 cl, 6 dwg
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