FIELD: technological processes.
SUBSTANCE: invention is related to technology for production of semiconductor materials and may be used in development of semiconductor instruments. In method for manufacture of product containing siliceous substrate with silicon carbide film on its surface, including heating of substrate and synthesis of film on substrate surface in gas medium, which contains carbonic compounds, gas medium used is carbon oxide or dioxide or mixture of carbon oxide or dioxide with inertial gas and/or nitrogen at pressure of 20-600 Pa, and heating of siliceous substrate is carried out until temperature is 950-1400°C. It is possible to use only carbon oxide CO or only carbon dioxide CO2. It is possible to use mixtures of gases as gas medium containing the following components: 45%wt of carbon oxide CO, 50%wt of argon and 5%wt of nitrogen. After silicon carbide layer formation was completed, it is reasonable to carry out etching and/or vacuum annealing.
EFFECT: improved quality of silicon carbide film and simplified technology of product making.
6 cl, 8 dwg
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