MULTIELEMENT TERAHERTZ RADIATION GENERATOR Russian patent published in 2014 - IPC G02F1/00 

FIELD: electricity.

SUBSTANCE: multielement terahertz radiation generator includes test sample, femtosecond laser, multielement emitter where element emitter is made in the form of crystal semiconductor with sputtered metal mask forming sharp laser illumination gradient for crystal semiconductor layer. On the boundary of illuminated and shaded parts of semiconductor layer, a sharp gradient of photoexcited charge carrier concentration is formed parallel to the semiconductor surface. In addition the device includes elliptical mirror forming a focused terahertz radiation beam, while multielement emitter includes a raster of cylindrical microlenses distributing laser radiation between element emitters and illuminating only those semiconductor layer areas involved in terahertz radiation generation. The metal mask is made in the form of flat metal stripes.

EFFECT: increased power of terahertz radiation, possible application of small test samples.

3 cl, 2 dwg