SILICON PHOTOMULTIPLIER Russian patent published in 2014 - IPC H01L31/115 

FIELD: physics, optics.

SUBSTANCE: invention relates to semiconductor optoelectronic devices, particularly photodetectors with high efficiency of detecting light. A cell for the silicon-based photomultiplier according to the invention comprises a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer (2), wherein the first layer (2) and the second layer (3) form a first p-n junction. The device is characterised by that the cell is further treated via ion implantation, wherein ion implantation parameters are selected such that owing to the damage of the crystal lattice caused by implantation, the absorption length of infrared light with wavelength in the range from about 800 nm to 1000 nm is reduced, specifically at least three-fold, and more specifically at least five-fold.

EFFECT: invention enables to produce a cell for a silicon-based photomultiplier and a silicon-based photomultiplier having a plurality of cells in which optical interference between cells is considerably reduced without considerably reducing efficiency of optical detection, wherein the cells of the silicon-based photomultiplier are formed with a higher efficiency of optical detection for wavelength greater than 800 nm.

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