MICROCHANNEL AVALANCHE PHOTODIODE Russian patent published in 2008 - IPC H01L31/06 

FIELD: recording extremely weak light pulses, gamma-quanta, and charged particles incorporated in medical gamma-tomography instruments including single photons, radiation monitoring, and experiments in nuclear-physics.

SUBSTANCE: proposed avalanche photodiode has substrate and semiconductor layers of different electrophysical properties with common interfaces both between themselves and between them and substrate. In addition, avalanche photodiode has at least one bidimensional matrix of separate solid-state regions surrounded by semiconductor material of one polarity of conductivity. Solid-state regions are disposed between two additional semiconductor layers of enhanced conductivity with respect to semiconductor layers; the latter and additional semiconductor layers have common interfaces.

EFFECT: enhanced stability of photodiode amplitude and sensitivity of avalanche diode in visible and ultraviolet regions of spectrum.

4 cl, 1 dwg