SILICON PHOTOELECTRONIC MULTIPLIER (ALTERNATIVES) AND LOCATIONS FOR SILICON PHOTOELECTRONIC MULTIPLIER Russian patent published in 2006 - IPC H01L31/06 G01T1/24 

FIELD: semiconductor devices for nuclear and laser engineering, technical and medical tomography, and the like.

SUBSTANCE: proposed silicon photoelectronic multiplier is available of two design alternates. Silicon photoelectronic multiplier of design alternate 1 has p substrate with dope concentration of 10¹⁸ to 10²⁰ cm^-3 assembled of locations, each incorporating p epitaxial layer with concentration of dope grown on substrate varying in gradient manner between 10¹⁸ and 10¹⁴ cm^-3, p layer with dope concentration of 10¹⁵ to 10¹⁷ cm^-3, and n⁺ layer with dope concentration of 10¹⁸ to 10²⁰ cm^-3; polysilicon resistor disposed in each location on silicon oxide layer functions to connect n⁺ layer to power bus; isolating components are inserted between locations. Silicon photoelectronic multiplier of design alternate 2 has n substrate carrying p⁺⁺ layer with dope concentration of 10¹⁸ to 10²⁰ cm^-3 and is assembled of locations whose structure is similar to that of design alternate 1; disposed in each location on silicon oxide layer is polysilicon resistor and isolating components are inserted between locations.

EFFECT: enhanced efficiency of light beam recording in wide wavelength band due to enhanced sensitivity of locations, enhanced single electron resolution and excess noise suppression.

3 cl, 3 dwg