FIELD: electricity.
SUBSTANCE: method envisages manufacture of electron emitter of heat-resistant material with addition of cesium or barium; monocrystal W or Mo or Nb or Ta is used as a material for the emitter while barium or cesium are implanted to the emitter material by impingement by the beam of ions accelerated up to energy of 30-60 keV till implantation doses of 1,016 ion/cm2 are reached. Additional scanning of the ion beam is carried out at the emitter surface in horizontal and vertical direction.
EFFECT: simplifying manufacture of emitter with maintenance of all main output parameters of the device in regard to large density of electron current.
2 cl, 1 tbl, 1 dwg
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