METHOD OF FORMING NICKEL CARBIDE FILMS ON NICKEL-SILICON HETEROSTRUCTURE Russian patent published in 2025 - IPC H01L21/18 C01B32/914 

FIELD: chemistry.

SUBSTANCE: invention can be used in production of lithium-ion batteries. Invention consists in a two-step process, where at the first step a process of molecular-layer deposition of a polymer from a gas phase on a Ni-Si_sub heterostructure is carried out. Second stage is followed by thermal treatment of the polymer at temperatures of 1200 °C in a vacuum or inert atmosphere, as a result of which a Ni_xC film is formed. As a result of the pyrolytic process, a uniformly distributed layer of graphitized carbon is formed, which at temperature of 1200 °C interacts with nickel on the Ni_xC surface.

EFFECT: invention enables to control thickness of up to 0.1 nm of a conformally deposited polymer film, due to which it becomes possible to control thickness of a nickel carbide film as a product of polymer pyrolysis on a Ni-Si_sub heterostructure.

1 cl, 2 dwg