FIELD: chemistry.
SUBSTANCE: method includes forming a film with thickness of not more than 200 nm from semiconductor nanoparticles of SnO2 with size of not more than 50 nm. The film of SnO2 nanoparticles is then annealed at temperature of 330±20 K or 500±20 K for at least 15 min in an oxygen-containing atmosphere, followed by cooling to room temperature at a rate of at least 10 K/s.
EFFECT: broader functional capabilities of the material.
2 cl, 4 dwg
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