INCREASE OF POLYSILICON DEPOSITION EFFICIENCY IN THE DEPOSITION REACTOR FROM STEAM PHASE Russian patent published in 2012 - IPC C23C16/24 C23C16/44 C01B33/27 

Abstract RU 2442844 C2

FIELD: chemistry.

SUBSTANCE: the invention relates to production of polysilicon, in particular, to the reactor for chemical deposition of polysilicon from steam phase. = The reactor includes a support system fitted with supports for heating elements and the hull attached to the said support system, forming the deposition chamber. The device comprises at least one silicone heating element positioned in the chamber on the supports, and a power source connectable with both ends of the heating element through lead-ins in the support system, used to heat the heating element. The support system has a gas inlet connected with the silicon-containing gas source and a gas outlet. Furthermore, the heating element is U-shaped and has at least one tubular section with the outer diameter of at least 20 mm and the ratio of wall width to the outer diameter less than 1/4.

EFFECT: increased polysilicon production yield.

7 cl, 6 dwg

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RU 2 442 844 C2

Authors

Van Juehpeng

Partasarati Santana Ragavan

Kart'E Karl

Servini Adrian

Kattak Chandra P.

Dates

2012-02-20Published

2007-04-19Filed