SWITCH AND COMMUTATOR SWITCH Russian patent published in 2014 - IPC H01H59/00 G02B26/00 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to a switch or a commutator switch having at least one said switch, which comprises a MEMS-based bistable element, switching means and a switching node. The switching node used is a MIS transistor, the movable gate of which is a movable spring-loaded diaphragm with at least one conducting element over the channel region of the MIS transistor and with an inclusion of magnetic material. The magnetic inclusion on the diaphragm can be made of magnetically soft or magnetically hard material. To move the diaphragm from one stable state to another, the magnetic inclusion on the diaphragm is exposed to external or switch-integrated one or more magnetic field sources.

EFFECT: high-reliability, easy to manufacture and universal MEMS switch with fixed states, while maintaining the state without power, which does not require high switching voltages and does not have magnetic contacts.

9 cl, 2 dwg