FIELD: chemistry.
SUBSTANCE: invention relates to the technology of applying copper current-conducting structures onto the surface of dielectrics and can be used for the creation of elements and devices in microelectronics. A solution contains copper (II) formiate with the concentration of 0.02÷0.6 mol/l of the water solution, a reducing agent in the form of methyl or isopropyl alcohol with the concentration of 0.05÷2 mol/l of the water solution or in the form of 1,3-butylene glycol, in the concentration of the water solution of 0.05÷0.3 mol/l, as well as a surface-active additive - Twin 20 or Twin 80 in the concentration of the water solution of 0.01÷1 g/l.
EFFECT: claimed solution makes it possible to metallise the dielectric surface at a high rate and to obtain continuous conducting copper paths, corresponding to boards of class 5 accuracy.
6 cl, 15 dwg, 3 ex
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Authors
Dates
2014-11-10—Published
2013-03-26—Filed