FIELD: chemistry.
SUBSTANCE: invention relates to deposition of current-conducting copper structures on the surface of dielectric materials and can be used to make microelectronic components and devices. A solution for depositing copper on a dielectric material contains an activating additive in the form of a compound with pronounced oxidative properties with concentration of the aqueous solution of 0.002-5 mol/l, a copper (II) salt: chloride, sulphate or nitrate, with concentration of the aqueous solution of 0.02-0.04 mol/l, a copper ion ligand: EDTA (in ratio of 1:1 to the concentration of the copper salt) or potassium-sodium tartrate (in ratio of 3:1 to the concentration of the copper salt), a reducing agent: 1,3-butylene glycol (0.05-0.3 mol/l), or 1,4-butylene glycol (0.05-0.3 mol/l), or glycerine (0.05-0.3 mol/l), or ethylene glycol (0.05-0.3 mol/l), wherein the activating additive is selected from a group comprising permanganates, manganates, chromates, dichromates, perchlorates, perbromates, chlorates, bromates, chlorites, hypochlorites and hypobromites of alkali metals, as well as iron (III) salts, such as sulphates, chlorides, bromides and nitrates.
EFFECT: disclosed solution enables to metal coat a dielectric surface at a high rate and obtain continuous conducting copper tracks which correspond to accuracy grade 5 boards, on glass and ceramic substrates.
10 cl, 14 dwg, 1 tbl, 4 ex
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Authors
Dates
2015-05-10—Published
2013-03-12—Filed