METHOD OF REMOVING OXIDE FROM SILICON PLATE SURFACE Russian patent published in 2014 - IPC H01L21/306 

Abstract RU 2534444 C2

FIELD: chemistry.

SUBSTANCE: in a method of processing silicon plates before sputtering the removal of oxide from the surface of the silicon plates is performed in a solution, which contains ammonium bifluoride (NH4HF2) and de-ionised water (H2O) in a ratio of NH4HF2:H2O=1:26, with the time of processing constituting not more than 10 seconds at room temperature.

EFFECT: complete removal of oxide residues from the surface of silicon plates, reduction of the processing time and reduction of the process cost.

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RU 2 534 444 C2

Authors

Ismailov Tagir Abdurashidovich

Shakhmaeva Ajshat Rasulovna

Zakharova Patimat Rasulovna

Dates

2014-11-27Published

2013-03-05Filed