FIELD: chemistry.
SUBSTANCE: in a method of processing silicon plates before sputtering the removal of oxide from the surface of the silicon plates is performed in a solution, which contains ammonium bifluoride (NH4HF2) and de-ionised water (H2O) in a ratio of NH4HF2:H2O=1:26, with the time of processing constituting not more than 10 seconds at room temperature.
EFFECT: complete removal of oxide residues from the surface of silicon plates, reduction of the processing time and reduction of the process cost.
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Authors
Dates
2014-11-27—Published
2013-03-05—Filed