METHOD OF DETERMINING DURATION OF PLASMA-CHEMICAL ETCHING OF SURFACE OF SEMICONDUCTOR PLATES FOR SUBMICRON TECHNOLOGY Russian patent published in 2014 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. The method of determining duration of plasma-chemical etching of the surface of semiconductor plates for removing films from unmasked surfaces and obtaining a clean surface includes etching multiple plates for different durations, determining the amount of residual and contaminating impurities on the surface of the plates and determining the duration of etching from the time of etching with the minimum amount of impurities on the surface, wherein the amount of residual and contaminating impurities on the surface of the plates is determined by probing the surfaces with helium and neon ion beams with energy of 1-5 keV, beam current density of less than 100 mcA/cm² and recording the energy spectrum of reflected ions at a scattering angle of more than 90° and the type and amount of impurities are determined from the energies and values of maxima in the spectrum, respectively.

EFFECT: high reliability of determining the type and amount of impurities on the surface of semiconductor plates after plasma-chemical etching and determining the optimum duration of etching.

1 dwg