FIELD: electronics.
SUBSTANCE: invention relates to electron-beam technology and can be used in optics, photonics, integral optics, nanoplasmonics and electronics. Method of producing metal films of specified shape consists in that, on a substrate with high electric resistance a metal film is applied with thickness of 50-100 nm, irradiated by a scanning electron beam with energy of electrons 3-10 keV, a dose of 20-100 mC/cm2 and chemical etching of metal film to its disappearance at portions of substrate not irradiated with electrons.
EFFECT: advantage of method is that metal films of specified shape can be made on any dielectric or semiconductor substrates or films with high electric resistance, as well as chemical-resistant polymers.
1 cl, 5 dwg
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Authors
Dates
2016-09-10—Published
2015-04-29—Filed