METHOD OF PRODUCING MULTIELEMENT PHOTODETECTOR BASED ON EPITAXIAL InGaAs/InP STRUCTURES Russian patent published in 2014 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: multielement photodetector based on epitaxial p-i-n structures of InGaAs/InP on a surface of p+-In 0.53 Ga 0.47 As is made by depositing a photoresist mask by a photolithographic technique, ion etching to an n+-InP substrate and finish chemical etching to form a plurality of identical non-coupled p-i-n regions on a conducting base, insulated from each other by a space with a width of 1 mcm. The loss of light flux in an array with a pitch of 15 mcm is 6.5%, which is four times less than when using a liquid technique to form separate p-i-n diodes. The etching depth of the mesa structure is determined by the time and rate of etching with argon ions with energy of 1 keV and current density of 0.2 mA/cm² to the n+-InP substrate through the photoresist mask, which enables to stop the etching process at the desired depth by separating array elements on carrier-depleted n-layer, thereby eliminating photoelectric coupling between separate elements.

EFFECT: invention provides a technique for producing an array of photosensitive elements with minimal light flux losses without photoelectric coupling and with a high speed of operation.

1 dwg