FIELD: electricity.
SUBSTANCE: method to divide transistors by reliability includes measurement of low frequency noise, at the same time measurement of voltage of low-frequency noise of emitter-base transition is carried out before and after exposure to X-ray twice: after radiation of half-dose and full dose permissible according to technical conditions, and by behaviour of low frequency noise parameter they divide transistors into reliable and potentially reliable.
EFFECT: increased validity of the method without exceeding permissible exposure factors.
1 dwg
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