HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR ON SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2025 - IPC H10D30/80 

FIELD: microwave electronics.

SUBSTANCE: according to the invention, in a high-power microwave field-effect transistor on a semiconductor heterostructure, comprising a semiconductor substrate, a buffer layer, a sequence of at least one layer of wide-bandgap and one layer of narrow-bandgap materials of a semiconductor heterostructure of the AlGaAs-InGaAs-GaAs type with given characteristics, source, gate, drain electrodes located on the outer surface of the semiconductor heterostructure, wherein in the channel layer there is at least one additional system of layers doped with a donor impurity, separated from the channel on each side by a barrier layer or a system of Al_xGa_1-xAs layers with a thickness of at least 1 nm with a molar fraction of a chemical element Alx greater than 0.05; and between the additional system of donor-doped layers and the barrier layers on at least one side there is an undoped GaAs layer.

EFFECT: invention increases specific output power while maintaining gain.

4 cl, 1 dwg, 1 tbl