HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR ON SEMICONDUCTOR HETEROSTRUCTURE WITH QUANTUM BARRIERS Russian patent published in 2025 - IPC H10D30/47 

FIELD: electricity.

SUBSTANCE: invention can be used for development of microwave field transistors on semiconductor heterostructure. Essence of the invention consists in the fact that a high-power microwave field-effect transistor on a semiconductor heterostructure with quantum barriers comprises a semiconductor substrate, a buffer layer, sequence of at least one layer of wide-bandgap and one layer of narrow-bandgap materials of semiconductor heterostructure AlGaAs-InGaAs-GaAs with given characteristics, wherein in the channel layer there is at least one additional system of layers doped with a donor impurity, separated from the channel on each side by a barrier layer of Al_xGa_1-xAs with a thickness of at least 1 nm with a molar fraction of a chemical element of 0.05 < Al_x < 0.4, or at least one barrier layer of i-AlAs with thickness of 2-6 atomic monolayers, or a combination of barrier layers Al_xGa_1-xAs and i-AlAs, wherein the layers of i-AlAs are separated by at least one layer of narrow-gap material GaAs with thickness of at least 2 atomic monolayers or Al_xGa_1-xAs with molar fraction of the chemical element Al_x < 0.4 with thickness of at least 2 atomic monolayers, and an undoped GaAs layer is located between the additional system of donor-doped layers and the barrier layers on at least one side.

EFFECT: high specific output power of a microwave field effect transistor on a semiconductor heterostructure while maintaining the gain.

4 cl, 2 dwg, 1 tbl