METHOD OF MAKING A TENSORESISTOR PRESSURE SENSOR WITH HIGH TIME AND TEMPERATURE STABILITY BASED ON THIN-FILM NANO- AND MICRO-ELECTROMECHANICAL SYSTEM Russian patent published in 2016 - IPC G01L9/00 H01L41/22 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement equipment, particularly to tensoresistor pressure sensors based on thin-film nano- and micro-electromechanical system (NAMEMS) with a bridge measurement circuit, intended for use in systems of control, monitoring and diagnostics of objects of long-term operation. Method of making a tensoresistor pressure sensor with high time and temperature stability based on thin-film nano- and micro-electromechanical system (NAMEMS) involves formation of strain gauges by a sequence of process operations, impact of test factors, determination of strain gauges resistance at test effects, calculation of stability criteria and comparing them with test values. Herewith after connecting lead-out conductors to contact pads the NAMEMS tensoresistors are exposed to a number of test voltages, polarity of which coincides with the working polarity, and a number of test voltages, polarity of which is opposite to the working polarity, and the value of voltages in both polarities are in-series equal to N^-1U_M, 2N^-1U_M, 3N^-1U_M, … NN^-1U_M, where N is the number of intervals of breakdown of the value of maximum allowable supply voltage U_M of the strain gauges to measure currents flowing through the strain gauges at each test voltage value. Stability criteria are defined by ratios $${\Psi }_1{\left(R\right)}_{+}={\displaystyle \sum _{J=1}^N\left|U_{j+}{I}_{j+}^{-1}-U_{м}{I}_{м}^{-1}\right|N^{-1}}$$ , $${\Psi }_1{\left(R\right)}_{-}={\displaystyle \sum _{J=1}^N\left|U_{j-}{I}_{j-}^{-1}-U_{м}{I}_{м}^{-1}\right|N^{-1}}$$ , $${\Psi }_2\left(R\right)={\displaystyle \sum _{J=1}^N\left|U_{j+}{I}_{j+}^{-1}-U_{j-}{I}_{j-}^{-1}\right|}$$ , where I_{j +} is the current measured at test voltage U_{j +}, the polarity of which coincides with the working polarity; I_j is the current measured at test voltage U_j-, the polarity of which is opposite to the working polarity, and if $$\left|{\Psi }_1{\left(R\right)}_{+}\right|<\left|{\Psi }_1{\left(R\right)}_{\max }\right|$$ , $$\left|{\Psi }_1{\left(R\right)}_{-}\right|<\left|{\Psi }_1{\left(R\right)}_{\max }\right|$$ , $$\left|{\Psi }_2\left(R\right)\right|<\left|{\Psi }_2{\left(R\right)}_{\max }\right|$$ , where Ψ₁(R)_max, Ψ₂(R)_max is respectively the maximum tolerable first and second stability criteria values, which are determined experimentally by statistical data for a specific transducer, this assembly is transferred to next operations. Additionally resistive-strain sensors, contact pads and lead wires are connected into a bridge measuring circuit, and similarly it is subjected to impact of a number of test voltages, here to determine by corresponding ratios the values of the third and the fourth criteria of stability. If these values do not extend beyond the limits of tolerable values, this assembly is transferred to next operations.

EFFECT: technical result is upgraded time and temperature stability, longer operation and service life, as well as reduced time of getting ready and errors under variable temperatures and high vibration acceleration conditions, the possibility to use the power diagonal as the temperature sensor of the resistive strain gauges of intellectual pressure sensors based on the NAMEMS.

1 cl, 2 dwg